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       CDBQR70-HF SMD Schottky Barrier Diode Page 1 QW-G1103 REV:B 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 5mA IF = 1 mA VF V 1 0.41 Reverse current IR uA VR = 5 0V Capacitance between terminals Reverse recovery time f = 1 MHz, and 0 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm CT Trr pF nS 5 2 0.1 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit IO VR(RMS) VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Symbol Mi Parameter Conditions RMS reverse voltage mA V V V 70 49 70 70 IFSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A 0.1 PD Power dissipation mW 125 O C +125 TSTG Tj Storage temperature Junction temperature O C +125 -65 Comchip Technology CO., LTD. 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. 0402/SOD-923F Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0402/SOD-923F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking Code: Cathode band & BG - Mounting position: Any - Weight: 0.001 gram(approx.). Io = 7 0 mA VR = 7 0 Volts RoHS Device Halogen Free |